New Defect Related Phenomena in Semiconductor Heterolayers and Superlattices
Published online by Cambridge University Press: 26 February 2011
Recent work on defect related phenomena in heterojunctions and quantum well structures is reviewed. These include situations in which quantum wells behave as deep traps and the use of shallow and deep centers as new tools for band structure engineering. Among the latter tunable band discontinuities and the artificial tailoring of superlattice states via δ-doping techniques are discussed.
- Research Article
- Copyright © Materials Research Society 1988