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New Defect Related Phenomena in Semiconductor Heterolayers and Superlattices

Published online by Cambridge University Press:  26 February 2011

Federico Capasso
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
Fabio Beltram
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
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Abstract

Recent work on defect related phenomena in heterojunctions and quantum well structures is reviewed. These include situations in which quantum wells behave as deep traps and the use of shallow and deep centers as new tools for band structure engineering. Among the latter tunable band discontinuities and the artificial tailoring of superlattice states via δ-doping techniques are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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