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New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (Ir-Ras)

Published online by Cambridge University Press:  21 February 2011

K. Ishikawa ,
H. Ogawa ,
C. Inomata ,
S. Fujimura  and
H. Mori
K. Ishikawa
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
H. Ogawa
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
C. Inomata
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
S. Fujimura
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
H. Mori
Affiliation:
Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
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Abstract

Simulation of a thin oxide RAS spectrum obtained by using the dielectric function extracted from thick oxide RAS spectra is shown to be a viable method for the comparison of oxide films of differing thickness. Bulk and near-interfacial features of thermally grown SiO2 thin films were studied by this method and it was found that the LO phonon peak at about 1255 cm−1 reflects bulk SiO2 structure and a higher reflectance between 1100 and 1200 cm−1 reflects SiO2/Si interface structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 425
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Grunthaner, F.J. and Grunthaner, P.J., Mater. Sci. Rep. 1, 65 (1986) and references therein.CrossRefGoogle Scholar
2 Fitch, J.T., Lucovsky, G., Kobeda, E. and Irene, E.A. J. Vac. Sci. Technol., B7, 153 (1989).CrossRefGoogle Scholar
3 Brendel, R., Appl. Phys. A50, 587 (1990).CrossRefGoogle Scholar
4 Grosse, P., Harbecke, B., Heinz, B., Meyer, R. and Offenberg, M., Appl. Phys. A39, 257 (1986).CrossRefGoogle Scholar
5 Fujimura, S., Ishikawa, K. and Mori, H., The physics and chemistry of SiO2 and the Si-SiO2 interface 2, edited by Helms, C.R. and Deal, B.E., (Plenum Press, New York, 1993), p.91.CrossRefGoogle Scholar
6 Fujimura, S., Ogawa, H., Ishikawa, K., Inomata, C. and Mori, H., Ext. Abst. Intern. Conf. on Solid State Devices Mater. 1993, 618.Google Scholar
7 Ogawa, H., Inomata, C., Ishikawa, K., Fujimura, S. and Mori, H., Proc. Intern. Symp. on Control of Semicond. Interfaces 1993, (unpublished).Google Scholar