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Negative-Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Junzo Ishikawa*
Department of Electronics, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-01, Japan
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Negative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

Research Article
Copyright © Materials Research Society 1995

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1 Ishikawa, J., Rev. Sei. Instrum. 63, 2368 (1992).Google Scholar
2 Ishikawa, J., Rev. Sei. Instrum. 65, 1290 (1994).Google Scholar
3 Ishikawa, J., Surface and Coatings Technology 65, 64 (1994).Google Scholar
4 Ishikawa, J., Nucl. Instrum. Methods, B37/38 (1989) 38.Google Scholar
5 Ishikawa, J., Sei. Pap Inst. Phys. Chem. Res. (Jpn) 85, 57 (1990).Google Scholar
6 Ishikawa, J., Tsuji, H., Gotoh, Y. and Azegami, S., in Proc. 6th Intern. Symp. on Production and Neutralization of Negative Ions and Beams, Brookhaven, 1992 (AIP, New York, 1994), AIP Conf. Proc. Ser. No. 287, p. 66.Google Scholar
7 Ishikawa, J., Tsuji, H., Okada, Y., Shinoda, M. and Gotoh, Y., Vacuum 44, 203 (1993).Google Scholar
8 Tsuji, H., Ishikawa, J., Gotoh, Y. and Okada, Y., in Proc. 6th Intern. Symp. on Production and Neutralization of Negative Ions and Beams, Brookhaven, 1992 (AIP, New York, 1994), AIP Conf. Proc. Ser. No. 287, p. 530.Google Scholar
9 Ishikawa, J., Tsuji, H. and Maekawa, T., Vacuum 39, 1129 (1989).Google Scholar
10 Tsuji, H., Ishikawa, J., Maekawa, T. and Takagi, T., Nucl. Instrum. Methods B37/38, 1127 (1989).Google Scholar
11 Ishikawa, J., The 8th CIMTEC, Forum on New Materials, Florence, 1994, to be published in the Proceedings.Google Scholar
12 Ishikawa, J., in Proc. the 3rd Intern. Symp. on Diamond Materials, Hololulu, 1993 (The Electrochemical Society, Inc., Pennington, 1993) p. 969.Google Scholar
13 Ishikawa, J., Takeiri, Y. and Takagi, T., Rev. Sei. Instrum. 57, 1512 (1986).Google Scholar
14 Ishikawa, J., Takeiri, Y., Tsuji, H., Taya, T. and Takagi, T., Nucl. Instrum. Methods 232[B4] 186 (1984).Google Scholar
15 Ishikawa, J., Tsuji, H., Toyota, Y., Gotoh, Y., Matsuda, K., Tanjyo, M. and Sakai, S., the Tenth Intern. Conf. on Ion Implantation Technology, Catania, 1994, to be published in Nucl. Instrum. Methods.Google Scholar
16 Mack, M.E., Ryding, G., Douglas-Hamilton, D.H., Steeples, K., Farley, M., Wittkower, A., and Lambracht, R., Nucl. Instrum. Methods B6, 405 (1985).Google Scholar
17 Basra, V.K., Mckenna, CM. and Felch, S.B., Nucl. Instrum. Methods B21, 360 (1987).Google Scholar