Skip to main content Accessibility help
×
Home
Hostname: page-component-564cf476b6-lwxm7 Total loading time: 0.189 Render date: 2021-06-20T17:38:31.527Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study

Published online by Cambridge University Press:  10 February 2011

M. Lcurrent
Affiliation:
Applied Materials, Austin, Texas, USA, current_michael@amat.com
M. A. Foad
Affiliation:
Applied Materials, Horsham, West Sussex, England
J. G. England
Affiliation:
Applied Materials, Horsham, West Sussex, England
D. Lopes
Affiliation:
Applied Materials, Santa Clara, CA USA
C. Jones
Affiliation:
Philips Materials Analysis Group, Sunnyvale CA, USA
D. Su
Affiliation:
Philips Materials Analysis Group, Sunnyvale CA, USA
Corresponding
E-mail address:
Get access

Abstract

Atomic profiles (SIMS) and cross-section TEM images of selectively etched, annealed profiles were studied for Boron energies from 20 da eV (200 eV) to 10 keV and RTP anneals at 900, 975 and 1050 C Consistent variations of dopant depth was obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the poly mask.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below.

References

1. “The National Technology Roadmap for Semiconductors”, Semiconductor Industry Association, San Jose, CA, USA (1994)Google Scholar
2..Chason, E., Picrauz, S.T., Poate, J.M., Current, M.I., Borland, J.O., Diaz de la Rubia, T., Eaglesham, D.J., Holland, W.O., Law, M.E., Magee, C.W., Mayer, J.W., Melngailis, J., Tasch, A.F., Mat. Res. Soc. Proc. Vol 396 (1996) 859868 and to appear in J. Appl. Phys. in May, 1997.Google Scholar
3. England, J.G., Joyce, L., Burgess, C., Moffatt, S., Foad, M.A., Armour, D., Current, M.I., in Ion Implantation Technology-96, edited by Ishida, E. et al.(to be published by IEEE in 1997).Google Scholar
4. Riley, T.J., Nanda, A.K., Miner, G., Pas, M.F., Hossain-Pas, S., Velo, L.A., Mat. Res. Soc. Proc. 429 (1996)15.CrossRefGoogle Scholar
5. Nanda, A.K., Riley, T.J., Miner, G., Pas, M.F., Hossain-Pas, S., Mat. Res. Soc. Proc. 429 (1996) 23.CrossRefGoogle Scholar
6. Pas, M.F., Cleavelin, C.R., Pas, S.D., Kuehne, J., Kittl, J., Wise, R., Hsia, S., Hey, P., in Rapid Thermal Processing '96, edited by Fair, R.B. et al (Boise, Idaho) pp. 2127.Google Scholar
7. Current, M.I., Castle, M., Chia, V., Mount, G., Weinzierl, S., Prussin, S., Larson, L.A., in Ion Implantation Technology-96, edited by Ishida, E. et al. (to be published by IEEE in 1997).Google Scholar
8. Ito, H., Current, M.I., in Ion Implantation Technology-96, edited by Ishida, E. et al. (to be published by IEEE in 1997).Google Scholar
9. Klepeis, S.J. et al. Mater. Res. Soc. Proc. 117 (1988) 179.Google Scholar
10. Spinella, C., Raineri, V., La Via, F., Campisano, S.U., J. Vac. Sci. Technol. B14 (1996) 414420.CrossRefGoogle Scholar
11. Foad, M.A., England, J.G., Moffatt, S., Armour, D.G., in Ion Implantation Technology-96, edited by Ishida, E. et al.(to be published by IEEE in 1997).Google Scholar
12. Hatzopoulos, N., Suder, S., van den Berg, J.A., Donnelly, S.E., Cook, C.E.A., Armour, D.G., Lucassen, M., Frey, L., Bailey, P., Noakes, C.T., Panknnin, D., Fukarek, W., Foad, M.A., England, J.G., Moffatt, S., Ohno, H., in Ion Implantation Technology-96, edited by Ishida, E. et al. (to be published by IEEE in 1997).Google Scholar
13. Smith, R., Webb, R.P., Phil. Mag. Lett. 64 (1991) 253260.CrossRefGoogle Scholar
14. Diaz de la Rubia, T., private communication (1997).Google Scholar
15. Downey, D.F., Liebert, R.B., Nucl. Instr. and Meth. B55 (1991) 4954.CrossRefGoogle Scholar
16. Duane, M., Nunan, P., ter Beek, M., Subramanian, R., J. Vac. Sci. Technol. B14 (1996) 218223.CrossRefGoogle Scholar
17. Nakagawa, S.T., Thome, L., Saito, H., Clerc, C., Nucl. Instr. and Meth. B121 (1997) 3639.CrossRefGoogle Scholar
18. Hobler, G., Selberherr, S., IEEE Trans, on CAD 8 (1989) 450459 Google Scholar
19. Hobler, G., private communication (1996).Google Scholar
20. Current, M.I., Cheung, N.W., Hemment, P.L.F., Yamada, I., Matsuo, J., in Ion Implantation Science and Technology, ed. Ziegler, J.F., Ion Implantation Technology Co. (1996) 92174.Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *