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Native Oxide Growth Behavior on Silicon Surface with Various Resistivity in Ultrapure Water and CuF2 Solution

Published online by Cambridge University Press:  10 February 2011

Katsuyuki Sekine
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980-77, Japan
Geun-Min Choi
Affiliation:
Memory R&D Division, Hyundai Electronics Co., LTD, San 136-1 Ami-Ri Bubal-Eub, Kyoungki-Do, 467–701, Korea
Yuji Saito
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980-77, Japan
Tadahiro Ohmi
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980-77, Japan
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Abstract

We have studied native oxide growth behavior on silicon surface with various resistivity in ultra pure water (UPW), SPM (sulfuric acid-hydrogen peroxide mixture, H2SO4:H2O2 = 4:1) cleaning and UPW contaminated with CuF2 by X-Ray photoelectron spectroscopy (XPS). The results show that the native oxide growth behavior in UPW is different from that in UPW contaminated with CuF2 and that grown by SPM cleaning. Native oxide thickness grown in UPW depends on resistivity. Native oxide thickness grown during SPM cleaning has the relationship of steric hinderance effect. However, in CuF2 solution, native oxide thickness is more influenced by the redox reaction between Cu ions and silicon atoms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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