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Nanostructure of a-Si:H and Related Materials by Small-Angle X-Ray Scattering

Published online by Cambridge University Press:  15 February 2011

D. L. Williamson
D. L. Williamson*
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
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Abstract

The use of small-angle x-ray scattering to examine nanostructural features of a-Si:H and the related alloys a-SiGe:H and a-SiC:H will be reviewed. A wide range of H, Ge, and C compositions has been investigated. The films examined came from several film- and device-making groups and represent current state-of-the-art solar cell material or attempts to develop improved and more stable material. A detailed comparison of the three classes of materials reveals dramatic differences in nanostructure. The diffuse component of the small-angle scattering, not recognized or discussed in previous small-angle scattering experiments on these materials by other groups, is shown to contain potentially valuable information on the atomic-scale structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 251
Copyright
Copyright © Materials Research Society 1995

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