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Nanostructuration of Cr/Si layers induced by ion beam mixing

Published online by Cambridge University Press:  22 February 2013

L. Luneville
DEN/DANS/DM2S/SERMA/LLPR/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette, France
L. Largeau
LPN-UPR20/CNRS, Route de Nozay, 91460 Marcoussis, France
C. Deranlot
Unité Mixte de Physique CNRS/Thales, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
N. Moncoffre
IPNL-IN2P3, 69622 Villeurbanne, France
Y. Serruys
DEN/DANS/DMN/SRMP, CEA Saclay, 91191 Gif-sur-Yvette, France
F. Ott
DSM/IRAMIS/LLB, CEA Saclay, 91191 Gif-sur-Yvette, France
G. Baldinozzi
CNRS-SPMS/UMR 8580/ LRC CARMEN Ecole Centrale Paris, 92295 Châtenay-Malabry, France
D. Simeone
DEN/DANS/DMN/SRMA/LA2M/LRC-CARMEN, CEA Saclay, 91191 Gif-sur-Yvette, France
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This work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.

Copyright © Materials Research Society 2013 

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