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Nanolithography by Electron Beam Resist-trimming Technique

Published online by Cambridge University Press:  17 March 2011

Tatsuro Maeda ,
Kenichi Ishii ,
Eiichi Suzuki ,
Hiroshi Hiroshima ,
Tsutomu Iida ,
Yoshihumi Takanashi ,
Parhat Ahmet ,
Toyohiro Chikyow  and
Hirohisa Taguchi
Tatsuro Maeda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan, E-mail: tmaeda@etl.go.jp
Kenichi Ishii
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Eiichi Suzuki
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Hiroshi Hiroshima
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Tsutomu Iida
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Yoshihumi Takanashi
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Parhat Ahmet
Affiliation:
COMET-NIRIM, National Institute for Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Toyohiro Chikyow
Affiliation:
COMET-NIRIM, National Institute for Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Hirohisa Taguchi
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Abstract

We have investigated a resist-trimming process for SAL601 chemically amplified negative electron beam resist. Ultra-fine SAL601 resist patterns with a width of 16nm were obtained by an isotropic trimming process in oxygen plasma. This pattern resolution in SAL601 could not be obtained through direct electron beam lithography alone. Using the trimmed electron beam resists, we have successfully fabricated ultra-fine poly-silicon patterns of less than 20nm width. We applied this nanolithography technique to fabricating an ultra-small metal-oxide-semiconductor field-effect-transistor (MOSFET) and revealed that this trimming process is a useful method for nanometer-scale silicon device fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 636: Symposium D – Nonlithographic and Lithographic Methods of Nanofabrication-From Ultralarge Scale , 2000 , D9.28.1
Copyright
Copyright © Materials Research Society 2001

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