Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-20T13:43:49.186Z Has data issue: false hasContentIssue false

Nanolithography by Electron Beam Resist-trimming Technique

Published online by Cambridge University Press:  17 March 2011

Tatsuro Maeda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan, E-mail: tmaeda@etl.go.jp
Kenichi Ishii
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Eiichi Suzuki
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Hiroshi Hiroshima
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Tsutomu Iida
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Yoshihumi Takanashi
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Parhat Ahmet
Affiliation:
COMET-NIRIM, National Institute for Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Toyohiro Chikyow
Affiliation:
COMET-NIRIM, National Institute for Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Hirohisa Taguchi
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Get access

Abstract

We have investigated a resist-trimming process for SAL601 chemically amplified negative electron beam resist. Ultra-fine SAL601 resist patterns with a width of 16nm were obtained by an isotropic trimming process in oxygen plasma. This pattern resolution in SAL601 could not be obtained through direct electron beam lithography alone. Using the trimmed electron beam resists, we have successfully fabricated ultra-fine poly-silicon patterns of less than 20nm width. We applied this nanolithography technique to fabricating an ultra-small metal-oxide-semiconductor field-effect-transistor (MOSFET) and revealed that this trimming process is a useful method for nanometer-scale silicon device fabrication.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hiroshima, H., Okayama, S., Ogura, M., Komuro, M., Nakazawa, H., Nakayama, Y., Ohi, K., and Tanaka, K., J. Vac. Sci. Technol. B 13, 2514 (1995).Google Scholar
2 Fujita, J., Watanabe, H., Ochiai, Y., Manako, S., Tsai, J. S., and Matsui, S., J. Vac. Sci. Technol. B 13, 2757 (1995).Google Scholar
3 Sone, J., Fujita, J., Ochiai, Y., Manako, S., Matsui, S., Nomura, E., Baba, T., Kawaura, H., Sakamoto, T., Chen, C. D., Nakamura, Y., and Tsai, J. S., Nanotechnology 10, 135 (1999).Google Scholar
4 Manako, S., Ochiai, Y., Fujita, J., Samoto, N., and Matsui, S., Jpn. Appl. Phys. 33, 6993 (1994).Google Scholar
5 Dobisz, E. A., Fedynyshyn, T. N., Ma, D., Shirey, L. M., Bass, R., J. Vac. Sci. Technol. B 16 3773 (1998).Google Scholar
6 Fujita, J., Ohnishi, Y., Ochiai, Y., and Matsui, S., Appl. Phys. Lett. 68, 1297 (1996).Google Scholar
7 Fujita, J., Ohnishi, Y., Ochiai, Y., Nomura, E., and Matsui, S., J. Vac. Sci. Technol. B 14 4247 (1996).Google Scholar
8 Chung, J., Jeng, M. -C., Moon, J. E., Wu, A. T., Chan, T. Y., Ko, P. K., and Hu, C., IEEE Electron Device Lett. 9, 186 (1988).Google Scholar
9 Ono, M., Saito, M., Yoshitomi, T., Fiegna, C., Ohguro, O., and Iwai, H., IEDM Tech. Dig. 119 (1993).Google Scholar
10 Suzuki, E., Ishii, K., Kanemaru, S., Maeda, T., Tutsumi, T., Sekigawa, T., Nagai, K., and Hiroshima, H., IEEE Trans. Electron Devices, vol. 47, pp354359 (2000)Google Scholar
11 Azuma, T., Masui, K., Takigami, Y., Sasaki, H., Sakai, K., Nomaki, T., Kato, Y., and Mori, I., Jpn. Appl. Phys. 30, 3138 (1991).Google Scholar
12 Tennant, D., Klemens, F., Sorsch, T., Baumann, F., Timp, G., Layadi, N., Kornblit, A., Sapjeta, B. J., Rosamilia, J., Boone, T., Weir, B., and Silerman, P., J. Vac. Sci. Technol. B 15 2799 (1997).Google Scholar