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Nano-laminating of SiO2 and TiO2: Atomic layer deposition as a tool to gain new insight into interfaces

Published online by Cambridge University Press:  01 June 2015

Nicolas Sobel  and
Christian Hess
Nicolas Sobel
Affiliation:
Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Str. 8, 64287 Darmstadt, Germany
Christian Hess*
Affiliation:
Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Str. 8, 64287 Darmstadt, Germany
*
*hess@pc.chemie.tu-darmstadt.de
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Abstract

Atomic layer deposition (ALD) was used to deposit a laminate structure of alternating SiO2 and TiO2 monolayers onto a Si wafer. The resulting samples were analyzed in detail by X-ray photoelectron spectroscopy (XPS) revealing a distinct O 1s signature due to the presence of Si-O-Ti species. These findings are in good agreement with those reported for thin ALD films of TiO2 grown on SiO2.

Keywords

atomic layer depositionnanoscalex-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2118320
Copyright
Copyright © Materials Research Society 2015 

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