Nanocrystalline Silicon/Amorphous Silicon Dioxide Superlattices
Published online by Cambridge University Press: 10 February 2011
Thin layers made of densely packed silicon nanocrystals sandwiched between amorphous silicon dioxide layers have been manufactured and characterized. An amorphous silicon/amorphous silicon dioxide superlattice is first grown by CVD or RF sputtering. The a-Si layers are recrystallized in a two-step procedure (nucleation + growth) to form layers of nearly identical nanocrystals whose diameter is given by the initial a-Si layer thickness. The recrystallization is monitored using a variety of techniques, including TEM, X-Ray, Raman, and luminescence spectroscopies. When the a-Si layer thickness decreases (from 25 nm to 2.5 nm) or the a-SiO2 layer thickness increases (from 1.5 nm to 6 nm), the recrystallization temperature increases dramatically compared to that of a single a-Si film. The removal of the a-Si tissue present between the nanocrystals, the passivation of the nanocrystals, and their doping are discussed.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 49
- Copyright © Materials Research Society 1998