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Nanocrystalline Silicon/Amorphous Silicon Dioxide Superlattices

Published online by Cambridge University Press:  10 February 2011

Philippe M. Fauchet
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627, USA.
Leonid Tsybeskov
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627, USA.
Margit Zacharias
Also at Institute of Experimental Physics, Otto-von-Guericke University, Magdeburg, Germany
Karl Hirschman
Also at Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623
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Thin layers made of densely packed silicon nanocrystals sandwiched between amorphous silicon dioxide layers have been manufactured and characterized. An amorphous silicon/amorphous silicon dioxide superlattice is first grown by CVD or RF sputtering. The a-Si layers are recrystallized in a two-step procedure (nucleation + growth) to form layers of nearly identical nanocrystals whose diameter is given by the initial a-Si layer thickness. The recrystallization is monitored using a variety of techniques, including TEM, X-Ray, Raman, and luminescence spectroscopies. When the a-Si layer thickness decreases (from 25 nm to 2.5 nm) or the a-SiO2 layer thickness increases (from 1.5 nm to 6 nm), the recrystallization temperature increases dramatically compared to that of a single a-Si film. The removal of the a-Si tissue present between the nanocrystals, the passivation of the nanocrystals, and their doping are discussed.

Research Article
Copyright © Materials Research Society 1998

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