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Multispectral Photonic Crystal Photo Sensor

Published online by Cambridge University Press:  01 February 2011

Xiaochen Sun
Affiliation:
sunxc@mit.edu, MIT, Materials Science, 77 Massachusetts Ave., 13-4153, Cambrige, MA, 02139, United States, 617-253-6907
Juejun Hu
Affiliation:
hujuejun@mit.edu, MIT, Cambridge, MA, 02139, United States
Ching-yin Hong
Affiliation:
cyhong@MIT.EDU, MIT, Cambridge, MA, 02139, United States
Jeff Viens
Affiliation:
jfviens@MIT.EDU, MIT, Cambridge, MA, 02139, United States
Rupa Das
Affiliation:
rupadas@MIT.EDU, MIT, Cambridge, MA, 02139, United States
Anuradha M. M. Agarwal
Affiliation:
anu@mit.edu, MIT, Cambridge, MA, 02139, United States
Lionel C. Kimerling
Affiliation:
lckim@MIT.EDU, MIT, Cambridge, MA, 02139, United States
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Abstract

A novel photo sensor pixel using a one-dimensional (1D) photonic crystal structure incorporating photoconductive layers has been realized. The fabricated device exploits mode discrimination to provide simultaneous multispectral photo sensing capability. Resonant cavity enhancement (RCE) design allows the use of very thin photoconductive layer to achieve dramatically suppressed shot noise, as well as high quantum efficiency. Low cost amorphous silicon is used to be photoconductive material and the simply fabrication process is completely CMOS-compatible. Detectivities as high as 2.6×1010 cmHz1/2W−1 and 2.0×1010 cmHz1/2W−1 at the two pre-selected wavelengths, 632nm and 728nm, were achieved, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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