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Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

Published online by Cambridge University Press:  01 February 2011

Brandon Scott Passmore
Affiliation:
passmore6246@yahoo.com, University of Arkansas, Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States, 478-575-5444, 479-575-7967
Jiang Wu
Affiliation:
jxw009@uark.edu, University of Arkansas, Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Eric A. Decuir Jr.
Affiliation:
edecuir@uark.edu, University of Arkansas, Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Omar Manasreh
Affiliation:
manasreh@uark.edu, University of Arkansas, Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Peter M. Lytvyn
Affiliation:
plyt@microscopy.org.ua, V. Lashkaryov Institute of Semiconductor Physics, Prospect Nauki 45, Kiev, 03028, Ukraine
Vasyl P. Kunets
Affiliation:
vkunets@uark.edu, University of Arkansas, Physics, 835 W. Dickson St., Fayetteville, AR, 72701, United States
Greg J. Salamo
Affiliation:
salamo@uark.edu, University of Arkansas, Physics, 835 W. Dickson St., Fayetteville, AR, 72701, United States
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Abstract

The interband and intersubband transitions in self-assembled InAs and In0.3Ga0.7As quantum dots grown by molecular beam epitaxy have been investigated for their use in visible, near-, and mid-infrared detection applications. Devices based on InAs quantum dots embedded in an InxGa1−xAs (0 to 0.3) graded well and In0.3Ga0.7As quantum dots were fabricated in order to measure the temperature dependent (77 – 300 K) photoresponse. The dark current was measured in the temperature range of 77 to 300 K for the devices. Room temperature photoresponse ranging between 0.6 to 1.3 μm was observed for the InAs and In0.3Ga0.7As quantum dot photodetectors. Furthermore, a dual band photoresponse in the visible, near-, and mid-infrared spectral regions for both devices was observed at 77 K. Using a self-consistent solution of Schrödinger-Poisson equations, the peak position energies of the interband and intersubband transitions in the two multi-color quantum dot infrared photodetector structures was calculated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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