Hostname: page-component-6d856f89d9-8l2sj Total loading time: 0 Render date: 2024-07-16T07:06:15.509Z Has data issue: false hasContentIssue false

MPI/MS Studies of Thin Film Deposition Processes: Methyl Production from Trimethylgallium Decomposition and the Effect of Added Hydrazine

Published online by Cambridge University Press:  26 February 2011

D. W. Squire
Affiliation:
Code 6105, Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
C. S. Dulcey
Affiliation:
Code 6105, Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
M. C. Lin
Affiliation:
Code 6105, Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
Get access

Abstract

The low pressure pyrolysis of alkylmetals on resistively heated substrates was studied using multiphoton and electron ionization mass analysis. The activation energy for the production of gas phase methyl radicals from the decomposition of trimethylgallium under single collision conditions was found to be 26 ± 3 kcal/mol, which is to be compared to 13 ± 2 kcal/mol previously observed for trimethylaluminum. No evidence could be found for any surface radical reactions leading to the production of CH4 or C2H6. A proposed deposition mechanism accounting for these observations was tested by pyrolyzing trimethylgallium in the presence of hydrazine. No change in methyl signal was observed, supporting the theory that radical reactions do not occur on the surface under the conditions employed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]. Stringfellow, G.B., J. Crystal Growth, 68, 111 (1984).Google Scholar
[2]. Dapkus, P.D., Annu. Rev. Mater. Sci. 12, 243 (1982).Google Scholar
[3]. Stringfellow, G.B., Annu. Rev. Mater. Sci. 8, 73 (1978).Google Scholar
[4]. DiGiuseppe, T.G., Hudgens, J.W., and Lin, M.C., Chem. Phys. Lett. 82, 267 (1981).Google Scholar
[5]. DiGiuseppe, T.G., Hudgens, J.W., and Lin, M.C., J. Phys. Chem. 86, 36 (1982).Google Scholar
[6]. Hudgens, J.W., DiGiuseppe, T.G., and Lin, M.C., J. Chem. Phys. 79, 571 (1983).Google Scholar
[7]. Squire, D.W., Dulcey, C.S., and Lin, M.C., Chem. Phys. Lett., 116, 525 (1985).Google Scholar
[8]. Squire, D.W., Dulcey, C.S., and Lin, M.C., J. Vac. Sci. Technol. B3, 1513 (1985).Google Scholar
[9]. Squire, D.W., Dulcey, C.S., and Lin, M.C.. Proceedings, Int. Cong. Appl. Las. Elec.-Opt. (ICALEO ‘85), Laser Institute of America, Toledo, to be published.Google Scholar
[10]. Gaskill, D.K., Bottka, N.J., and Lin, M.C., to be published.Google Scholar