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Morphology of Silicon Islands Grown By Selective Epitaxy Over Silicon Dioxide

Published online by Cambridge University Press:  28 February 2011

S.T. Liu ,
K. Newstrom ,
M. Hibbs-Brenner ,
R.J. Stokes ,
B. Hoefflinger ,
G. Neudeck ,
R. Zingg ,
L. Bousse  and
J.D. Meindl
S.T. Liu
Affiliation:
Honeywell Physical Sciences Center, Bloomington, Minnesota 55420
K. Newstrom
Affiliation:
Honeywell Physical Sciences Center, Bloomington, Minnesota 55420
M. Hibbs-Brenner
Affiliation:
Honeywell Physical Sciences Center, Bloomington, Minnesota 55420
R.J. Stokes
Affiliation:
Honeywell Physical Sciences Center, Bloomington, Minnesota 55420
B. Hoefflinger
Affiliation:
Purdue University, West Lafayette, Indiana, 47907.
G. Neudeck
Affiliation:
Purdue University, West Lafayette, Indiana, 47907.
R. Zingg
Affiliation:
Purdue University, West Lafayette, Indiana, 47907.
L. Bousse
Affiliation:
Stanford University, Stanford, California 94305.
J.D. Meindl
Affiliation:
Stanford University, Stanford, California 94305.
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Abstract

We studied the selective epitaxial deposition of silicon in patterned oxide-free regions over silicon dioxide in a RF-heated, commercial, reduced-pressure epitaxial reactor, using SiH2Cl2/HCl/H2 gas system. We found that etching into silicon occurs at the high end of HCl content, and nucleation on the silicon dioxide at the low end of HCl content. The selective epitaxial growth of silicon islands is obtained in between.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 169
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Present address: Honeywell Solid State Laboratory, Plymouth, MN 55441

References

REFERENCES

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