Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-24T07:14:09.130Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphological evolution of large-scale vertically aligned ZnO nanowires and their photoluminescence properties by hydrogen plasma treatment

Published online by Cambridge University Press:  28 January 2011

Miao Zhong ,
Yanbo Li ,
Alexander Paulsen ,
Takero Tokizono ,
Ichiro Yamada  and
Jean-Jacques Delaunay
Miao Zhong
Affiliation:
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Yanbo Li
Affiliation:
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Alexander Paulsen
Affiliation:
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Takero Tokizono
Affiliation:
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Ichiro Yamada
Affiliation:
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Jean-Jacques Delaunay
Affiliation:
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Get access

Abstract

In this report, large-scale vertically aligned ZnO nanowires, with diameter around 75 nm and length around 2-5 μm, were synthesized on a-plane sapphire by a single step chemical vapor deposition method. The XRD pattern of the as-prepared sample showed a strong ZnO (0002) peak and a weak ZnO (0004) peak that indicate good orientation and high crystal quality of the ZnO nanowires. The sample was then treated by hydrogen plasma, without exhibiting obvious structural damage to the nanowires. The photoluminescence spectra of as-prepared and H2-plasma-treated samples were then examined. A strong green emission peak (centered at 520 nm) was observed in the PL spectrum of as-prepared sample. In sharp contrast, a significant increase of the near-band edge emission (centered at 380 nm) and a strong decrease of the green emission (centered at 520 nm) were found in the PL spectrum of H2-plasma-treated sample. We propose that an efficient passivation of oxygen vacancies by H atoms will cause a drastic decrease of the green emission. More important, it would lead to a significant reduction of surface depletion layer, leading to a great enlargement of total effect area for UV emission. Meanwhile, the significant enhancement of the intensity of UV emission might also attribute to the combined effects of structure-induced waveguide behavior and UV amplified spontaneous emission. It is expected that the enhanced UV emission of vertically aligned ZnO nanowires can be used to improve the performance of UV light emitting devices.

Keywords

chemical vapor deposition (CVD) (deposition)luminescencenanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1302: Symposium W – Nanowires—Growth and Device Assembly for Novel Applications , 2012 , mrsf10-1302-w06-24
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Willande, M., Nur, O., Zhao, Q. X., Yang, L. L., Lorenz, M., Cao, B. Q., Zuniga perez, J., Czekalla, C., Zimmermann, G., Grundmann, M., et al. , Nanotechnology. 20, 332001 (2009).Google Scholar
2. Johnson, J. C., Yan, H., Yang, P. and Saykally, R. J., J. Phys. Chem. B. 107, 8816 (2003).Google Scholar
3. Vanheusden, K., Warren, W. L., Seager, C. H., Tellant, D. R., Voigt, J. A., and Gnade, B. E., J. Appl. Phys. 79, 7983 (1996)Google Scholar
4. Wu, X. L., Siu, G. G., Fu, C. L., and Ong, H. C., Appl. Phys. Lett. 78, 2285 (2001)Google Scholar
5. Xu, C. X., Sun, X. W., Yuen, Clement, Chen, B. J., Yu, S. F., and Dong, Z. L., Appl. Phys. Lett. 86, 011118 (2005)Google Scholar
6. Hannon, J. B., Kodambaka, S., Ross, F. M., and Tromp, R. M., Nature. 440, 69 (2006).Google Scholar
7. Dick, K. A., Deppert, K., Karlsson, L. S., et al. Adv. Func. Mater. 15, 1603 (2005)Google Scholar
8. Li, Y., Valle, F. D., Simonnet, M., Yamada, I., Delaunay, J. J., Nanotechnology. 20, 045501 (2009).Google Scholar
9. Soci, C., Zhang, A., Xiang, B., Dayeh, S. A., Aplin, D. P. R., Park, J., Bao, X. Y., Lo, Y. H. and Wang, D., Nano Lett. 7, 1003 (2007).Google Scholar
10. Windisch, C. F., Exarhos, G. J., Yao, C. H., and Wang, L. Q., J. Appl. Phys. 101, 123711 (2007).Google Scholar
11. Yang, P., Wirnsberger, G., Huang, H. C., et al. , Science. 287, 465 (2000)Google Scholar
12. Zimmler, M. A., Stichtenoth, D., Ronning, C., Yi, W., Narayanamurti, V., Voss, T., and Capasso, F., Nano Lett. 8, 1695 (2008).Google Scholar
13. Zimmler, M. A., Bao, J. M., Capasso, F., Müller, S., and Ronning, C., Appl. Phys. Lett. 93, 051101 (2008).Google Scholar