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Monolithic 3D Integration of Single-Grain Si TFTs

Published online by Cambridge University Press:  01 February 2011

Mohammad Reza Tajari Mofrad ,
Ryoichi Ishihara ,
Jaber Derakhshandeh ,
Alessandro Baiano ,
Johan van der Cingel  and
Cees Beenakker
Mohammad Reza Tajari Mofrad
Affiliation:
m.r.tajarimofrad@tudelft.nl, ., ., ., ., ., Netherlands
Ryoichi Ishihara
Affiliation:
r.ishihara@tudelft.nl, Technical University of Delft, Department of Electrical Engineering, DIMES/ECTM, Delft, N/A, Netherlands
Jaber Derakhshandeh
Affiliation:
j.derakhshandeh@tudelft.nl, Technical University of Delft, Department of Electrical Engineering, DIMES/ECTM, Delft, N/A, Netherlands
Alessandro Baiano
Affiliation:
a.baiano@ewi.tudelft.nl, Technical University of Delft, Department of Electrical Engineering, DIMES/ECTM, Delft, N/A, Netherlands
Johan van der Cingel
Affiliation:
j.vandercingel@tudelft.nl, Technical University of Delft, Department of Electrical Engineering, DIMES/ECTM, Delft, N/A, Netherlands
Cees Beenakker
Affiliation:
beenakker@dimes.tudelft.nl, Technical University of Delft, Department of Electrical Engineering, DIMES/ECTM, Delft, N/A, Netherlands
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Abstract

Vertical stacking of transistors is a promising technology which can realize compact and high-speed integrated circuits (ICs) with a short interconnect delay and increased functionality. Two layers of low-temperature fabricated single-grain thin-film transistors (SG TFTs) have been monolithically integrated. NMOS mobilities are 565 and 393 cm2/Vs and pMOS mobilities are 159 and 141 cm2/Vs, for the top and bottom layers respectively. A three-dimensional (3D) inverter has also been fabricated, with one transistor on the bottom layer and the other on the top layer. The inverters showed an output voltage swing of 0 to 5 V with a switching voltage of around 2 V.

Keywords

thin filmlaser annealingcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A20-06
Copyright
Copyright © Materials Research Society 2008

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References

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