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Modeling of Be Diffusion in InGaAs Epitaxial Structures

Published online by Cambridge University Press:  10 February 2011

S. Gautier ,
S. Koumetz ,
J. Marcon ,
K. Ketata ,
M. Ketata  and
P. Launay
S. Gautier
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, B.P.08, F76131 Mont Saint Aignan, France
S. Koumetz
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, B.P.08, F76131 Mont Saint Aignan, France
J. Marcon
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, B.P.08, F76131 Mont Saint Aignan, France
K. Ketata
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, B.P.08, F76131 Mont Saint Aignan, France
M. Ketata
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, B.P.08, F76131 Mont Saint Aignan, France
P. Launay
Affiliation:
CNET de Bagneux, 196 av. H. Ravera, B.P. 107, F92225 Bagneux, France
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Abstract

The subject of this work is the simulation of Be diffusion during post-growth Rapid Thermal Annealing (RTA) of InGaAs epitaxial layers grown by Chemical Beam Epitaxy (CBE). This diffusion may occur during thermal treatments of InGaAs/InP Heterojunction Bipolar Transistors (HBT's), which contributes to limit the frequency performances of these devices. In order to characterize the Be depth profiles, Secondary Ion Mass Spectrometry (SIMS) has been used. The concentration dependent diffusivity has been covered to perform an improved data fitting of Be diffusion profiles. In a first step, the solid state diffusion mechanisms have been developed, including the Substitutional-Interstitial Diffusion (SID) and, in particular, Kick-out mechanism. To explain the observed concentration profiles and related diffusion mechanisms, a Generalized Substitutional-Interstitial Diffusion model is proposed. A simultaneous diffusion by Dissociative and Kick-out mechanisms is suggested. Good agreements between experimental depth profiles and simulated curves have been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 407
Copyright
Copyright © Materials Research Society 1997

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References

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