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Modeling Dopant Diffusion in SiGe and SiGeC alloys

Published online by Cambridge University Press:  17 March 2011

Ardechir Pakfar
Affiliation:
STMicroelectronics, 850 rue Jean Monnet F-38926 Crolles cedex, France CEA-DRT-LETI/DTS, 17 rue des Martyrs, F-38054 Grenoble cedex 09, France
Philippe Holliger
Affiliation:
CEA-DRT-LETI/DTS, 17 rue des Martyrs, F-38054 Grenoble cedex 09, France
Alain Poncet
Affiliation:
LPM - INSA de Lyon, 20 av. Albert Einstein, F-69621 Villeurbanne cedex, France
Cyril Fellous
Affiliation:
STMicroelectronics, 850 rue Jean Monnet F-38926 Crolles cedex, France
Didier Dutartre
Affiliation:
STMicroelectronics, 850 rue Jean Monnet F-38926 Crolles cedex, France
Thierry Schwartzmann
Affiliation:
STMicroelectronics, 850 rue Jean Monnet F-38926 Crolles cedex, France
Hervé Jaouen
Affiliation:
STMicroelectronics, 850 rue Jean Monnet F-38926 Crolles cedex, France
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Abstract

A unified diffusion model is developed, valid for all usual substitutional atoms in SiGe and strained SiGeC layers, in accordance with all published experimental data and predicting the enhancement of Arsenic diffusion in SiGe and SiGeC strained layers. Using a new SIMS methodology, the study of As intrinsic diffusion in SiGe and SiGeC layers is performed, at low concentration and under equilibrium annealing conditions. Arsenic diffusivity in fully-strained SiGe and SiGeC layers on Si substrates was successfully compared to the unified diffusion model.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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