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A Model for Double Positioning Twin Formation in Cubic SiC on Noncubic SiC Substrates

Published online by Cambridge University Press:  25 February 2011

Woo Sik Yoo
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
Charles P. Beetz. Jr
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
Fen-Ren Chien
Affiliation:
Brown University, Engineering Department, Providence, RI02912
Steven R. Nutt
Affiliation:
Brown University, Engineering Department, Providence, RI02912
Tsunenobu Kimoto
Affiliation:
Kyoto University, Department of Electrical Engineering, Kyoto, 606–01 Japan.
Hiroyuki Matsunami
Affiliation:
Kyoto University, Department of Electrical Engineering, Kyoto, 606–01 Japan.
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Abstract

As an attempt to explain polytype formation and crystal growth of SiC we propose an electrostatic model in which electrostatic Coulomb force is considered as an interatomic force. The dependence of surface potential on the stacking sequence of atoms in substrates was investigated, and the growth simulation was tried considering the energetic balance under various interaction lengths.The model predicts the double positioning twin formation and the difference in area between twins in cubic 3C-SiC growth on hexagonal 6H-SiC and rhombohedral 15R-SiC substrates. The prediction was experimentally tested by simultaneous chemical vapor deposition growth on basal planes of 6H-SiC(0001) and 15R-SiC(0001). Polytype and interface structure of both specimens were investigated by reflection high energy electron diffraction (RHEED) and high resolution transmission electron microscopy (HRTEM).

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

1. Matsunami, H., Nishino, S. and Ono, H., IEEE Trans. Electron Devices ED–28 (1981) 1235.CrossRefGoogle Scholar
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3. Kuroda, N., Shibahara, K., Yoo, W.S., Nishino, S. and Matsunami, H., Extended Abstracts of 19th Conf. on Solid State Device and Materials, Tokyo (1987) p227.Google Scholar
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A Model for Double Positioning Twin Formation in Cubic SiC on Noncubic SiC Substrates
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