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Misfit Dislocations in Epitaxial Layers of SI on Gap (001) Substrates

Published online by Cambridge University Press:  26 February 2011

M. P. A. Viegers
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands.
C. W. T. Bulle Lieuwma
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands.
P. C. Zalm
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands.
P. M. J. Maree
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

Misfit dislocations in epitaxial layers of Si grown by MBE at 570°C on GaP(001) substrates have been studied by TEM. It is found that layers as thick as 500 Å at least reside coherently on the substrate without misfit dislocations. In 1000 Å layers of Si the misfit strain is accommodated in part by 60-degree type dislocations with their Burgers vector inclined with respect to the interface, and by stacking faults intersecting the Si layer. The dislocations are dissociated into 30- and 90-degree Shockley partial dislocations. It is shown that in the case of a biaxial strain field, which is tensile in a (001)-plane, the 90-degree partial must be nucleated first. Only then can the 30-degree partial follow on the same glide plane. This geometrical effect explains the presence of dislocations as well as stacking faults in the Si layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

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