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Microstructure of A12O3 Irradiated with an Applied Electric Field

Published online by Cambridge University Press:  16 February 2011

S. J. Zinkle ,
J.D. Hunn  and
R.E. Stoller
S. J. Zinkle
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6376, USA.
J.D. Hunn
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6376, USA.
R.E. Stoller
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6376, USA.
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Abstract

A thin amorphous film of alumina was irradiated with 2-MeV He+ ions at ~400°C up to a damage level of about 0.01 displacements per atom (dpa). The alumina films were sufficiently thin (~1.8 μm) to allow the ion beam to be completely transmitted through the specimen. An electric field of μ280 V/;mm (dc) was applied continuously during the irradiation. Radiation induced electrical degradation (RIED), i.e. a permanent increase in the conductance of the film, was observed in specimens irradiated at temperatures near 400 to 450°C but did not occur in a specimen irradiated above 500°C. An investigation by transmission electron microscopy found no evidence for colloid formation. The observed increase in the conductance of the alumina film may be due to radiation-induced microcracking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 299
Copyright
Copyright © Materials Research Society 1995

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References

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