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The Microscopic Structure Of Shallow Donors In Silicon Carbide

Published online by Cambridge University Press:  15 February 2011

J.-M. Spaeth ,
S. Greulich-Weber ,
M. März ,
E. N. Kalabukhova  and
S. N. Lukin
J.-M. Spaeth
Affiliation:
Department of Physics, University of Paderborn, 33095 Paderborn, Germany
S. Greulich-Weber
Affiliation:
Department of Physics, University of Paderborn, 33095 Paderborn, Germany
M. März
Affiliation:
Department of Physics, University of Paderborn, 33095 Paderborn, Germany
E. N. Kalabukhova
Affiliation:
Institute of Semiconductors, Kiev, Ukraine
S. N. Lukin
Affiliation:
Institute of Semiconductors, Kiev, Ukraine
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Abstract

The electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 619
Copyright
Copyright © Materials Research Society 1997

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