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Metal Organic Chemical Vapour Deposition Growth of Epitaxial ZnSe/ZnS Multiple Layered Structures

Published online by Cambridge University Press:  26 February 2011

Heather M Yates  and
John O Williams
Heather M Yates
Affiliation:
Department of Chemistry, UMIST, P.O. Box 88, Sackville Street, Manchester M60 1QD, England
John O Williams
Affiliation:
Department of Chemistry, UMIST, P.O. Box 88, Sackville Street, Manchester M60 1QD, England
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Abstract

ZnSe-ZnS multilayers have been prepared by atmospheric. pressure metal organic chemical vapour deposition (M0CVD) using dimethylzinc, hydrogen sulphide and hydrogen selenide. Layer thicknesses down to 500Å have been obtained and the interfaces, as measured by secondary ion mass spectroscopy (SIMS) and electron microscopy, are regular. A notable improvement in interface abruptness was observed with better control of experimental procedures and more especially with the growth of a ZnSe buffer layer between the GaAs(100) substrate and multilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 137
Copyright
Copyright © Materials Research Society 1988

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References

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