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Mesoporous Low Dielectric Poly(silsesquioxane) Thin Films Templated by Various Surfactants

Published online by Cambridge University Press:  01 February 2011

Jingyu Hyeon-Lee ,
Jong-Baek Seon ,
Myungsup Jung  and
Jongmin Kim
Jingyu Hyeon-Lee
Affiliation:
Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, South Korea
Jong-Baek Seon
Affiliation:
Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, South Korea
Myungsup Jung
Affiliation:
Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, South Korea
Jongmin Kim
Affiliation:
Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, South Korea
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Abstract

Mesoporous low dielectric poly(silsesquioxane) thin films have been fabricated by templating various surfactants such as cetyltrimethyl ammonium bromide (CTAB) or 4-octylphenol polyethoxylate (OPE) in the silsesquioxane polymer matrix and their properties of the thin films characterized by electrical, mechanical and structural characterization. Depending on the types of the surfactants, mesoporous poly(silsesquioxane) thin films with different porosities have been formed. The dielectric constant (k) of the films depended on the content or porosity of the surfactants. The dielectric constants of ca. 2.2–2.4 were obtained for the films with relative porosities of about 15–30 vol. % to the polymer matrix itself. The elastic modulus of the films showed a dependency on the type, content of the surfactants and was ca. 2.9 GPa with the k value of ca. 2.38.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B8.4
Copyright
Copyright © Materials Research Society 2005

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