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Memory effects in MOS capacitors with silicon rich oxide insulators

Published online by Cambridge University Press:  17 March 2011

S. Lombardo
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, ITALY
I. Crupi
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, ITALY
C. Spinella
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, ITALY
C. Bongiorno
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, ITALY
Y. Liao
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, ITALY
C. Gerardi
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95121 Catania, ITALY
M. Vulpio
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95121 Catania, ITALY
B. Fazio
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95121 Catania, ITALY
S. Privitera
Affiliation:
Department of Physics, University of Catania, Corso Italia 57, 95129 Catania, ITALY
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Abstract

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials wereannealed in N2 ambient at temperatures between 950 and 1100 °C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory function of such structures has been investigated in metal-oxidesemiconductor (MOS) capacitors with a SRO film sandwiched between two thin SiO2 layers as insulator and with an n+ polycrystalline silicon gate. The operations of write and storage are clearly detected by measurements of hysteresis in capacitance-voltage characteristics and they have been studied as a function of bias.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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