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Mechanisms of Passivation of Copper in CMP Slurries Containing Peroxide and Glycine

Published online by Cambridge University Press:  01 February 2011

Ling Wang  and
Fiona M. Doyle
Ling Wang
Affiliation:
University of California at BerkeleyDepartment of Materials Science and Engineering 210 Hearst Mining Building Berkeley, CA 94720-1760
Fiona M. Doyle
Affiliation:
University of California at BerkeleyDepartment of Materials Science and Engineering 210 Hearst Mining Building Berkeley, CA 94720-1760
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Abstract

Copper has been observed to passivate in CMP slurries containing glycine, when hydrogen peroxide is used as an oxidant, even under acidic conditions where no solid oxidized phases appear on the potential-pH diagram. This passivation behavior is highly desirable for effective CMP. In contrast, passivation is not seen in slurries of similar pH and complexing agent concentration, where the potential is increased electrochemically. In order to model the effects of chemistry on CMP rates, we are endeavoring to better understand the mechanisms responsible for passivation in slurries containing hydrogen peroxide. Here we report tests that characterize the development and degree of passivation seen in slurries with a reasonably wide range of compositions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F6.5
Copyright
Copyright © Materials Research Society 2003

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References

1. Singer, P. Semiconductor International, 6, 91 (1998).Google Scholar
2. Lingk, C. and Gross, M. E., J. Appl. Physics, 84, 5547 (1998).Google Scholar
3. Carpio, R. Farkas, J. and Jairath, R. Thin Solid Films, 266, 238 (1995).Google Scholar
4. Osseo-Asare, K. and Mishra, K. K., J. Electronic Materials, 25, 1599 (1996).Google Scholar
5. Luo, Q. Campbell, D. R., and Babu, S. V. Thin Solid Films, 311, 177 (1997).Google Scholar
6. Carr, J. W., David, L. D., Guthrie, W. L., William, L. Kaufmann, F. B., Patrick, W. J., Rodbell, K. P., Pasco, R. W., and Nenadic, A. US Patent No. 4,954,142 (1990).Google Scholar
7. Hirabayashi, H. Huguchi, M. Kinoshita, M. Kaneko, H. Hayasaska, N. Mase, K. and Oshima, J., US Patent No. 5,575,885 (1996).Google Scholar
8. Hirabayashi, H. Kinoshita, M. Kaneko, H. Hayasaska, N. Huguchiet, M. Mase, K. and Oshima, J., in Proceedings of 1st International CMP for VLSI/ULSI Multilevel Interconnection Conference (CMP-MIC), Institute for Microoelectronics Interconnection (IMIC), p. 119 (1996).Google Scholar
9. Babu, S. V., Li, Y. Hariharaputhiran, M. Ramarajan, S. Zhang, J. Her, Y-S., and Prendergast, J. E., in Proceedings of 3rd International CMP for ULSI Multilevel Interconnection Conference (CMP-MIC), Institute for Microoelectronics Interconnection (IMIC), p. 443 (1998).Google Scholar
10. Hariharaputhiran, M. Ramarajan, S. Babu, S. V., in Chemical-Mechanical Polishing Fundamentals and Challenges, S. V. Babu, S. Danyluk M. Krishnan and M. Tsujimura Editors, PV 566, p. 129, The MRS Symposium Proceedings, Warrendale, PA (1999).Google Scholar
11. Aksu, S. and Doyle, F.M. “Electrochemistry of copper in aqueous glycine solutions”, Journal of the Electrochemical Society, 148 (1) pp. B51–B57 (2001).Google Scholar
12. Aksu, S. and Doyle, F.M. “The role of glycine in the chemical mechanical planarization (CMP) of copper”, Journal of the Electrochemical Society, 149, (6) G352–G361 (2002).Google Scholar
13. Aksu, S. and Doyle, F.M. “Electrochemistry of Copper in Aqueous Ethylenediamine Solutions”, Journal of the Electrochemical Society, 149 (7) B340–B347 (2002).Google Scholar
14. Aksu, S. and Doyle, F.M. “Electrochemistry of Copper in the Chemical Mechanical Planarization (CMP) Slurries Containing Glycine and Hydrogen Peroxide”, in Chemical Mechanical Polishing V, Ed. Seal, S. The Electrochemical Society, Pennington, New Jersey, PV-2002-1 pp. 79–90 (2002).Google Scholar
15. Aksu, S. Wang, L. and Doyle, F.M. “The effect of hydrogen peroxide on the oxidation of copper in CMP slurries containing glycine”, submitted to Journal of the Electrochemical Society.Google Scholar
16. Hernandez, J. Wrschka, P. and Oehlein, G. S., J. Electrochem. Soc., 148, G389 (2001).Google Scholar
17. Jones, C.W. Applications of Hydrogen Peroxide and Derivatives, Royal Society of Chemistry, Cambridge, UK (1999).Google Scholar
18. Hariharaputhiran, M. Zhang, J. Ramarajan, S. Keleher, J.J. Li, Yuzhuo, and Babu, S.V. J. Electrochem. Soc., 147, 3820 (2000).Google Scholar