Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-05-23T04:47:47.041Z Has data issue: false hasContentIssue false

Measurement of Optical Absorption in Very Thin Low-Loss SiO2 Films

Published online by Cambridge University Press:  22 February 2011

Robert M. Curran
Affiliation:
Honeywell Military Avionics Division, 2600 Ridgway Parkway, Minneapolis, MN 55413
Thomas M. Crook
Affiliation:
Honeywell Military Avionics Division, 2600 Ridgway Parkway, Minneapolis, MN 55413
J. David Zook
Affiliation:
Honeywell Physical Sciences Center, 10701 Lyndale Avenue South, Bloomington, MN 55420
Get access

Abstract

While low levels of optical absorption are easily measured in SiO2 bulk samples or optical fibers, we present here a method of detirmining low levels of absorption in thin films of SiO2. Films are deposited on top of high reflectivity multi-layer miriors, and absorption is derived from the time decay in a resonant cavity of threj mirrorsgt 633 nm. Absorption coefficients on the order of 1 cm−1. (k = 10−5) can be measured in films as thin as 100 Angstroms.

With this method, we find that absorption at 633 nm can be induced in SiO2 films by exposing them to a He-Ne plasma discharge. Although the plasma radiation (>10 eV) is absorbed near the SiO2 surface, the plasma-induced absorption is uniform within the SiO2 film. This was shown by plasma irradiation of SiO2 films of 4arying thickness, together with computer calgulation of the optical properties of multilayer thin films. Similar absorption behavior has been reported in SiO2 optical fibers and may be due here to DIA (Drawing-Induced Aisorption) centers or NBOHCs (Non-Bridging Oxygen Hole Centers).

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Anderson, D. Z., Appl. Opt. 23, 1238 (1984).Google Scholar
[2] Model PDC-3XG, Harrick Scientific Corp., Box 867, Ossining NY, 10562.Google Scholar
[3] Knittl, Z., Optics of Thin Films, (John Wiley, New York, 1976), Chapter 2.Google Scholar
[4] Macleod, H. A., Thin-film Optical Filters, (American Elsevier, New York, 1969), Chapter 2.Google Scholar
[5] Berning, P.H., in Physics of Thin Films, Hass, G., ed., Vol.1, (Academic Press, New York, 1963), p. 69 ff.Google Scholar
[6] Smith, H. L. and Cohen, A. J., J. Amer. Ceram. Soc. 47, 564 (1964); E. Lell, N. J. Kreidl and J. R. Hensler, Prog. Ceramic. Sci. 4, 1 (1966).Google Scholar
[7] Friebele, E. J., Sigel, G. H. Jr. and Griscom, D. L., Appl. Phys. Letters 42, 1345 (1979).Google Scholar
[8] Friebele, E. J., Griscom, D. L. and Marrone, M. J., J. Non-cryst. Solids 71, 133 (1985).CrossRefGoogle Scholar
[9] Philipp, H. R., in Handbook of Optical Constants of Solids, Palik, E. D., ed., (Academic Press, New York 1985), p. 758.Google Scholar
[10] Griscom, D. L., J. Non-Crys. Solids 73, 51 (1985).CrossRefGoogle Scholar
[11] Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) Physics and Technology, (John Wiley, New York, 1982), p. 541 and references contained therein.Google Scholar