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Measurement of Intrinsic Stress in a-Si:H thin films Deposited in a Remote Hydrogen Plasma Reactor
Published online by Cambridge University Press: 21 February 2011
Abstract
The effects of deposition conditions on the intrinsic stress in a-Si:H films deposited in a remote hydrogen plasma reactor are reported. The intrinsic stress is calculated from the change in substrate curvature induced by the a-Si:H film, as measured by the optical lever technique, and the results are compared with those for rf glow discharge deposited a-Si:H films.
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- Copyright © Materials Research Society 1991
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