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Magnesium Doping of GaN by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

Hongqiang Lu  and
Ishwara Bhat
Hongqiang Lu
Affiliation:
ECSE department, Rensselaer Polytechnic Institute, Troy, NY12180, hongql@ecse.rpi.edu
Ishwara Bhat
Affiliation:
ECSE department, Rensselaer Polytechnic Institute, Troy, NY12180, hongql@ecse.rpi.edu
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Abstract

P-type GaN films were grown on sapphire substrates in a horizontal metalorganic chemical vapor deposition system using (C5H5)2Mg (Cp2Mg) as the p-dopant source. It is found that the acceptor concentration in the post-growth annealed GaN samples increases with the Mg flow rate and reaches a peak value of 1×1019 cm−3 at Mg flow rate of 0.84 ĉmol/min. The films remain semi-insulating even after annealing when the Mg flow rate is higher than 1.08 ĉmol/min. The effects of annealing temperature and duration on the electrical properties of GaN are also investigated. The results confirm that a 800 °C, 30 minutes post-growth annealing in N2 ambient is sufficient to activate most of the Mg atoms. In addition, study of rapid thermal annealing of Mg-doped GaN was carried out and the results show that the p-type acceptor concentration obtained is comparable to the results obtained using furnace annealing process. Finally, GaN light emitting diodes (LEDs) are demonstrated using undoped layer as the n-type base layer in a p-on-n structure. The light emission spectra are dominated by the 430 nm peak, accompanied with two relatively weak peaks located at 380nm and 550nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 497
Copyright
Copyright © Materials Research Society 1996

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References

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