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Luminescence Studies of MBE Grown SI/SIGE Quantum Wells

Published online by Cambridge University Press:  25 February 2011

M. Gail
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
J. Brunner
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
U. Menczigar
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
A. Zrenner
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
G. Abstreiter
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
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Abstract

We report on detailed luminescence studies of MBE grown Si/Si1-xGex quantum well structures. Both well width and composition is varied over a wide range. Bandgap photoluminescence is observed for all samples grown at elevated temperatures. The measured bandgap energies are in good agreement with subband calculations based on effective mass approximation and taking into account the segregation of Ge atoms during growth. Diffusion is found to limit quantum well (QW) growth with Ge-contents above 35% at high temperatures. The photoluminescence signals are detected up to about 100K and can be attributed to interband transitions of free excitons. We also present investigations of the exciton binding energy as a function of well width and composition. The observed shift of the exciton binding energy is compared with results of a variational calculation. A distinct onset in photocurrent and electroluminescence up to 200 K are observed in quantum well diodes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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