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LPE Growth of Atomically Flat Ge Layer on a Mesa Pattern

Published online by Cambridge University Press:  01 February 2011

Takahiro Maruyama ,
Keiji Matsuda ,
Norikazu Saikawa  and
Shigeya Naritsuka
Takahiro Maruyama
Affiliation:
Dept. of Materials Science & Engineering, Meijo University Meijo University, 21st CENTURY COE program “NANO FACTORY” 1–501 Shiogama-guchi, Tempaku-ku, Nagoya 468–8502, Japan
Keiji Matsuda
Affiliation:
Dept. of Materials Science & Engineering, Meijo University
Norikazu Saikawa
Affiliation:
Dept. of Materials Science & Engineering, Meijo University
Shigeya Naritsuka
Affiliation:
Dept. of Materials Science & Engineering, Meijo University Meijo University, 21st CENTURY COE program “NANO FACTORY” 1–501 Shiogama-guchi, Tempaku-ku, Nagoya 468–8502, Japan
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Abstract

Aiming at the growth of step free surface on mesas, we tried to suppress the formation of two-dimensional nucleation on grown surface by decreasing the supersaturation. When the supersaturation was enough small at the growth temperature below 400 °C, flat facets were formed on some mesas after the LPE growth for 30 min. We considered that these facets are formed on mesas with dislocation-free surface, considering the dislocation density of Ge substrate. AFM observation indicated that some triangle hollows with monolayer step in depth were present on these facets, but that the region among the hollows was atomically flat. It was also found that the amount and the size of the hollows were related to the growth temperature. Our results show the possibility that atomically flat Ge area beyond 100 μm2 will be obtained by the control of the growth condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 788: Symposium L – Continuous Nanophase and Nanostructured Materials , 2003 , L3.47
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Weishart, H., Bauser, E., Konuma, M. and Queisser, H.-J., J. Cryst. Growth 137 (1994) 335.Google Scholar
[2] Powell, J.A., Neudeck, P.G., Trunek, A.J. and Beheim, G‥M., Matus, L.G., Hoffman, R.W. Jr, and Keys, L.J., Appl. Phys. Lett. 77 (2000) 1449.Google Scholar
[3] Tsaur, B.-Y., Gein, M.W., Fan, J.C.C. and Gale, R.P., Appl. Phys. Lett. 38 (1981) 779.Google Scholar
[4] Ohmachi, Y., Nishioka, T. and Shinoda, Y., J. Appl. Phys. 54 (1983) 5466.Google Scholar
[5] Yu, G., Ebisu, H., Rahman, M.M., Soga, T., Jimbo, T. and Umeno, M., Jpn. J. Appl. Phys. 41 (2002) 579.Google Scholar