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Low Temperature ZnO TFTs Fabrication with Al and AZO Contacts for Flexible Transparent Applications

Published online by Cambridge University Press:  07 February 2013

Gerardo Gutierrez-Heredia ,
Israel Mejia ,
Norberto Hernandez-Como ,
Martha E. Rivas-Aguilar ,
Victor H. Martinez-Landeros ,
Francisco S. Aguirre-Tostado ,
Bruce E. Gnade  and
Manuel Quevedo
Gerardo Gutierrez-Heredia
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA. Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
Israel Mejia
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA.
Norberto Hernandez-Como
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA.
Martha E. Rivas-Aguilar
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA.
Victor H. Martinez-Landeros
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA. Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
Francisco S. Aguirre-Tostado
Affiliation:
Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
Bruce E. Gnade
Affiliation:
Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
Manuel Quevedo
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, USA. Centro de Investigacion en Materiales Avanzados S. C., Campus Monterrey, Mexico.
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Abstract

Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100 °C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using ebeam. The devices showed mobilities >10 cm2/V-s, threshold voltage in the range of 7 V and On/Off current ratios >105. The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80 %.

Keywords

oxideZnAl
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 299 - 303
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Park, S-H. K., Hwang, C-S., Ryu, M., Yang, S., Byun, C., Shin, J., Lee, J-I., Oh, M. S. and Im, S., Adv. Mater.Vol.21, 6, 678–682 (2009).CrossRefGoogle Scholar
Park, C. H., Im, S., Yun, J., Lee, G. H., Lee, B. H. and Sung, M. M., Appl. Phys. Lett. Vol. 95, 223506 (2009).CrossRefGoogle Scholar
Oh, M. S., Choi, W., Lee, K., Hwang, D. K. and Im, S., Appl. Phys. Lett. Vol. 93, 033510 (2008).CrossRefGoogle Scholar
Shin, W.-C., Remashan, K., Jang, J.-H., Oh, M.-S. ans Park, S-J., J. Korean Phys. Soc.Vol. 55, 4, 1514–1518 (2009).Google Scholar
Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J. and Keszler, D. A, Appl. Phys. Lett.Vol.86, 013503 (2005).CrossRefGoogle Scholar
Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M. and Hosono, H., Nature 432, 488–492 (2004).CrossRefGoogle Scholar
Fortunato, E., Barquinha, P., Pimentel, A., Gonçalves, A., Marques, A., Pereira, L. and Martins, R., Adv. Mater. Vol. 17, 5 (2005).CrossRefGoogle Scholar
Pearton, S. J., Abernathy, C. R., Overberg, M. E., Thaler, G. T., Norton, D. P., Theodoropoulou, N., Hebard, A. F., Park, Y. D., Ren, F., Kim, J. and Boatner, L. A., J. Appl. Phys. Vol. 93, 1 (2003).CrossRefGoogle Scholar
Özgür, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, C., Cho, S. J., and Morkoç, H., J. Appl. Phys. Vol. 98, 041301 (2005).CrossRefGoogle Scholar
Kim, H.-K., Kim, K.-K., Park, S.-J., Seong, T.-Y. and Adesida, I., J. Appl. Phys. Vol 94, 4225 (2003).CrossRefGoogle Scholar
Miyata, T., Ohtani, Y., Koboi, T. and Minami, T., Thin Film Solid 516, 1354–1358 (2008).CrossRefGoogle Scholar