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Low Temperature Transport Properties of Ru2Si3 Single Crystals

Published online by Cambridge University Press:  15 February 2011

U. Gottlieb ,
R. Madar  and
O. Laborde
U. Gottlieb
Affiliation:
Laboratoire des Matériaux et du Génie Physique, École Nationale Supérieure de Physique de Grenoble, Institut National Polytechnique de Grenoble, Domaine Universitaire, B.P. 46, 38402 St. Martin d'Hères
R. Madar
Affiliation:
Laboratoire des Matériaux et du Génie Physique, École Nationale Supérieure de Physique de Grenoble, Institut National Polytechnique de Grenoble, Domaine Universitaire, B.P. 46, 38402 St. Martin d'Hères
O. Laborde
Affiliation:
Centre de Recherches sur les Très Basses Températures, Laboratoire associé à l'Université J. Fourrier and Laboratoire des Champs Magnétiques Intenses, CNRS, BP 166, 38042 Grenoble Cedex 9, France
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Abstract

We present here low temperature transport properties of Ru2Si3 single crystals. Below room temperature the resistivity behaviour of this material is extrinsic. The Hall coefficient is positive down to about 10 K and the becomes negative below. We explain this crossover with a two band model. At very low T, the magnetoresistance of our crystals shows the typical behaviour for a doped semiconductor on the metallic side of the metal-insulator transition and can be described by a scaling law characteristic for weak localisation with strong electronelectron interactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 581
Copyright
Copyright © Materials Research Society 1996

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