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Low Temperature Growth and Application of Zinc Oxide Nanowires using Zinc Oxide Seeds

Published online by Cambridge University Press:  01 February 2011

Lee Sunyoung
Affiliation:
tjsdud@etri.re.kr, Electronics and Telecommunications Research Institute, Cambridge-ETRI Joint R&D Centre, 161 Gajeong-Dong, Yuseong-gu, Daejon, 305-700 KOREA, Daejon, N/A, Korea, Republic of
Myoung Hey Jin
Affiliation:
mhj64276@etri.re.kr, Electronics and Telecommunications Research Institute, Cambridge-ETRI Joint R&D Centre, 161 Gajeong-Dong, Yuseong-gu, Daejon, 305-700 KOREA, Daejon, N/A, Korea, Republic of
Maeng Sunglyul
Affiliation:
slm221@etri.re.kr, Electronics and Telecommunications Research Institute, Cambridge-ETRI Joint R&D Centre, 161 Gajeong-Dong, Yuseong-gu, Daejon, 305-700 KOREA, Daejon, N/A, Korea, Republic of
Kim Sang-Hyeob
Affiliation:
shk1028@etri.re.kr, Electronics and Telecommunications Research Institute, Cambridge-ETRI Joint R&D Centre, 161 Gajeong-Dong, Yuseong-gu, Daejon, 305-700 KOREA, Daejon, N/A, Korea, Republic of
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Abstract

The growth of ZnO nanowire arrays on a variety of substrates using a chemical wet process is presented. ZnO seeds can act as a nucleation layer for wire growth and ZnO nanowire arrays can have direct contact with a variety of substrates. The structural and optical properties of ZnO nanowire arrays grown at 90°C are investigated. FESEM and X-ray diffraction observations reveal that the crystalline ZnO nanowire arrays are preferentially oriented along the c axis. The room temperature photoluminescence (PL) measurements had shown ultraviolet peaks and a deep level peak. After annealing at 900°C for 1 min. by RTA, the deep level peak became much weaker and the band-edge emission PL was much stronger.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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