Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-18T07:37:58.170Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Epitaxial Growth of AlN & GaN Thin Films by the Method of Ion Beam Assisted Deposition

Published online by Cambridge University Press:  21 February 2011

Ig-Hyeon Kim ,
Chan-Wook Jeon  and
Seon-Hyo Kim
Ig-Hyeon Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang 790-784, South Korea
Chan-Wook Jeon
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang 790-784, South Korea
Seon-Hyo Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang 790-784, South Korea
Get access

Abstract

The epitaxial layers of AIN and GaN were grown on Si and Sapphire substrate at a relatively low temperature of around 500 °C using the process of reactive ion beam assisted deposition. The optimum ion beam energy for epitaxial growth of AIN and GaN films was found to be about 50 eV. Characterization of the epitaxial layers was carried out by GID (Grazing-Incidence x-ray Diffraction) and high resolution TEM observation. The orientational relations between epitaxial layer and substrate were determined through these analysis. Very thin amorphous layers were observed at the interfaces of bom AIN and GaN films grown on Si(111) substrate, whereas the films grown on Sapphire substrate has no amorphous layer. The amorphous layer may act as a buffer layer enabling the growth of the epitaxial layers of AIN and GaN by relaxing the misfit strain in the early growing stage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 313
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yim, W.M., Stofko, E.J., Zanzucchi, P.J., Sttenberg, M., and Gilbert, S.L., J.Appl.Phys., 44,292(1973).Google Scholar
2 Maruska, H.P. and Tietjen, J.J., Appl.Phys.Lett., 15 327(1969).Google Scholar
3 Ross, J., Rubin, M., and Gustafson, T.K., Mat.Res.Soc.Symp.Proc. Vol. 242, 457(1992)Google Scholar
4 Powell, R.C., Lee, N.-E., Kim, Y.-M., and Greene, J.E., JAppl.Phys., 73 (1), 189 (1993).Google Scholar
5 Lei, T., Fanciulli, M., Molnar, R.J., Moustakas, T.D., Grahan, R.J., and Scanlon, J., Appl. Phys.Lett. 59, 944(1991).Google Scholar
6 Strite, S. and Morkoc, H., J.Vac.Sci.Technol., B 10 (4), 1237 (1992).Google Scholar
7 Lim, G., Parrish, W., and Ortiz, C., J.Mat.Res., 2 (4), 471 (1987).Google Scholar
8 Segmüller, A., J.Vac.Sci.Technol., A9 (4), 2477 (d).Google Scholar
9 Amono, H., Akasaki, I., Hiramatsu, K., Koide, N., and Sawaki, N., Thin Solid Films, 163, 415 (1986).Google Scholar
10 Paisley, M.J., Sitar, Z., Posthill, J.B., and Davis, R.F., J.Vac.Sci.Technol., A7 (3), 701 (1979).Google Scholar