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Low Pressure MOVPE Photo-Assisted Growth of ZnxCd1-xS

Published online by Cambridge University Press:  22 February 2011

Hervé Dumont
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606-01, Japan
Shizuo Fujita
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606-01, Japan
Shigeo Fujita
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606-01, Japan
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Abstract

We will report the photo-assisted heteroepitaxial growth of Zn x Cdl-x S by Metalorganic Vapor Phase Epitaxy (MOVPE). Sources materials were diethylzinc, dimethylcadmium and tertiaributylmercarptan. We have studied the effect of light intensity on the change of the Zn composition, crystalline quality and optical properties of epitaxial layers grown on (100) GaAs substrates. The Zn composition of the films could be increased by ≃ 15% by illuminating layers during the growth at 400°C. Concerning the characterization of epilayers, we observed a bright luminescence peak at E = 2.80 eV for x≃ 0.4. Epilayers with the best crystalline quality we could grown exhibited a full width at half maximum of ≃ 70 arsec by x-ray diffraction rocking curves when grown at 380°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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