Skip to main content Accessibility help
×
Home
Hostname: page-component-99c86f546-66nw2 Total loading time: 0.308 Render date: 2021-12-02T16:15:05.484Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Light-Induced Change of Si-H Bond Absorption in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

Guozhen Yue
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing, China
Liangfan Chen
Affiliation:
Solarex, 826 Newtown-Yardlly Road, Newtown, PA 18940, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Eugene Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Guanglin Kong
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing, China
Jonathan Baugh
Affiliation:
Dept. of Physics & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255, USA
Yue Wu
Affiliation:
Dept. of Physics & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255, USA
Daxing Han
Affiliation:
Dept. of Physics & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255, USA
Get access

Abstract

Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from ∼2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number ∼2000 cm−1, and the less stable one exhibits a decrease at ∼2040 cm−1and an increase at ∼1880 cm−1.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yang, L. and Chen, L., Appl. Phys. Lett. 63, 400 (1993).CrossRefGoogle Scholar
2 Han, Daxing, Wang, Keda, and Yang, Liyou, J. Appl. Phys. 80, 2475 (1996).CrossRefGoogle Scholar
3 Mahan, A. H., Carapella, J., Nelson, B. P., Crandall, R. S., and Balberg, I., J. Appl. Phys. 69, 6728 (1991).CrossRefGoogle Scholar
4 Mahan, A. H. and Vanecek, M., AlP Conference Proc. 234, 195 (1991).CrossRefGoogle Scholar
5 Lucovsky, G., Nemanich, R.J., and Knights, J. C., Phys. Rev. B 19, 2064 (1979).CrossRefGoogle Scholar
6 Zanzucchi, P. J., in “Hydrogenated Amorphous Silicon”, Semiconductors and Semimetals, Vol 21B, edited by Pankove, J. I., (Academic Press, 1984), p. 113.Google Scholar
7 Brodsky, M. H., Cardona, M., and Cuomo, J. J., Phys. Rev. B16, 3556 (1977).CrossRefGoogle Scholar
8 Carlson, D.E., Smith, R.W., Zanzucchi, P.J., and Frenchu, W.R., in Pro. IEEE Photovoltaics Specialists Conf., 16th, (SanDiego, CA, pp. 13721375. IEEE, New York, 1982).Google Scholar
9 Darwich, R. et al. , Philosophical Magazine B, 72, 363372 (1995).CrossRefGoogle Scholar
10 Zhao, Yiping, Kong, Guaglin, Pan, Guanggin, and Liao, Xianbo. Phys. Rev. Lett. 74, 558 (1995).Google Scholar
11 Kong, G. L., Zhang, D. L., Zhao, Y. P., Sun, G. S., Pan, G. Q., and Liao, X. B., J. Non-Cryst. Solids 164/166, 211 (1993);Solid State Phenomena, 44/46, Part 2: p677-684 (1995).CrossRefGoogle Scholar
12 Branz, H. M., Solid State Communications, in press.Google Scholar
13 Holbech, J.D., Nielsen, B. Bech, Jones, R., Sitch, P., Oberg, S., Phys. Rev. lett. 71, 875 (1993).CrossRefGoogle Scholar
14 Gotoh, T., Nonomura, S., Nishio, M., Masui, N. and Nitta, S., Proc. of 17th International Conf. on Amorphous and Microcrystalline Silicon, to be published in J. Non-Cryst. Sol (1998).Google Scholar
15 Wu, Y., , Y., Stephen, J. T., Han, D. X., Rutland, J. M., Crandall, R.S., and Mahan, A. H., Phys. Rev. Lett. 77, 2049 (1996).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Light-Induced Change of Si-H Bond Absorption in Hydrogenated Amorphous Silicon
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Light-Induced Change of Si-H Bond Absorption in Hydrogenated Amorphous Silicon
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Light-Induced Change of Si-H Bond Absorption in Hydrogenated Amorphous Silicon
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *