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Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

Published online by Cambridge University Press:  15 February 2011

L. Tsybeskov ,
K. L. Moore ,
P. M. Fauchet  and
D. G. Hall
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
K. L. Moore
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
P. M. Fauchet
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627 Also Laboratory for Laser Energetics and Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627
D. G. Hall
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
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Abstract

Silicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 523
Copyright
Copyright © Materials Research Society 1997

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