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Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements

Published online by Cambridge University Press:  31 January 2011

Filippo Giannazzo
Affiliation:
filippo.giannazzo@imm.cnr.it, CNR-IMM, Catania, Italy
Sushant Sonde
Affiliation:
sushant.sonde@imm.cnr.it, CNR-IMM, Catania, Italy
Jean-Roch Huntzinger
Affiliation:
jean-roch.huntzinger@univ-montp2.fr, GES, CNRS and Université Montpellier 2, Montpellier, France
Antoine Tiberj
Affiliation:
antoine.tiberj@ges.univ-montp2.fr, GES, CNRS and Université Montpellier 2, Montpellier, France
Rositza Yakimova
Affiliation:
roy@ifm.liu.se, IFM, Linkoping University, Linkoping, Sweden
Vito Raineri
Affiliation:
vito.raineri@imm.cnr.it, CNR-IMM, Catania, Italy
Jean Camassel
Affiliation:
camassel@ges.univ-montp2.fr, GES, CNRS and Université Montpellier 2, Montpellier, France
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Abstract

Conductive Atomic Force Microscopy was applied to study the lateral uniformity of current transport at the interface between graphene and 4H-SiC, both in the case of epitaxial graphene (EG) grown on the Si face of 4H-SiC and in the case of graphene exfoliated from HOPG and deposited (DG) on the same substrate. This comparison is aimed to investigate the role played by the C-rich buffer layer present at EG/4H-SiC interface and absent in the case of DG/4H-SiC. The distribution of the local Schottky barrier heights at EG/4H-SiC interface (ΦEG) was compared with the distribution measured at DG/4H-SiC interface (ΦDG), showing that ΦEG (0.36±0.1eV ) is ˜0.49eV lower than ΦDG (0.85 ± 0.06eV). This difference is explained in terms of the Fermi level pinning ˜0.49eV above the Dirac point in EG, due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the buffer layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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