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Lateral Diffusion and Capture of Iron in P-Type Silicon

Published online by Cambridge University Press:  26 February 2011

Kevin L. Beaman
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC
Aditya Agarwal
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC
Sergei V. Koveshnikov
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC
George A. Rozgonyi
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC
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Abstract

The lateral motion of iron impurities was observed and studied in ptype iron contaminated silicon. The lateral diffusion was induced by and then measured using Schottky diodes with a special interdigitated fingers design. Capture of the impurities was done by diffusing to laterally placed dislocation loops formed by a self aligned ion implantation. Lateral changes in Fe concentration were determined using capacitance-voltage and deep level transient spectroscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

[1[ Rozgonyi, G.A., Koveshnikov, S., and Agarwal, A., in Semiconductor Silicon 1994, ed. by Huff, H.R., Bergholz, W. and Sumino, K. (Electrochemical Society, 1994), p. 868.Google Scholar
[2[ Weber, E., Appl. Phys. A, 30, 122 (1983)CrossRefGoogle Scholar
[3[ Graff, K. and Pieper, H., J. Electrochem. Soc., 128, No. 3, 669, (1981)CrossRefGoogle Scholar
[4[ Hsu, S.N. and Chen, L.J., Nuc. Inst. and Methods in Phys. Research, B55, p. 620, (1991)CrossRefGoogle Scholar

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