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Laser-Excited Fluorescence Detection of Si2 During Silane CVD

Published online by Cambridge University Press:  21 February 2011

William G. Breiland ,
Michael E. Coltrin  and
Pauline Ho
William G. Breiland
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Michael E. Coltrin
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Pauline Ho
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Using laser-excited fluorescence, Si2 has been observed in a CVD cell during the deposition of silicon from silane.The formation of Si2 was predicted by our numerical model for CVD which includes a detailed treatment of the chemical kinetics and fluid flow in the gas phase. Our observations of Si2 provide strong support for this model. We also find excellent agreement between the temperature dependence of silicon deposition rates predicted by the model and experimental deposition rates from the literature. These observations indicate that gas-phase chemical reaction kinetics are more important in silane CVD than has been recognized previously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 225
Copyright
Copyright © Materials Research Society 1984

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References

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