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Laser Processing of Amorphous Silicon for Polysilicon Devices, Circuits and Flat-Panel Imagers

Published online by Cambridge University Press:  17 March 2011

J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. T. Fulks
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. Ho
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. P. Lu
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
P. Mei
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
K. F. Van Schuylenbergh
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Y. Wang
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows for the fabrication of high-quality polysilicon thin-film transistors (TFTs). It also provides procedures for doping self-aligned amorphous silicon TFTs. In addition, laser-crystallized polysilicon exhibits some interesting materials properties, such as, large lateral grain growth with a corresponding enhancement in the electron mobility. Under optimized processing conditions, excellent polysilicon TFTs with high mobilities, sharp turn on, low off-state leakage currents and good spatial uniformity have been achieved. These improved parameters, particularly the low off-state leakage currents and good uniformity, enable not only displays but also the moredemanding flat-panel imaging arrays to be fabricated in polysilicon. Results on both polysilicon CMOS circuits and a polysilicon flat-panel imager are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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