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Laser Photochemical Etching of GaP in KOH Aqueous Solutions

Published online by Cambridge University Press:  21 February 2011

A. Wayne Johnson
Affiliation:
Sandia National Laboratories, Laser and Atomic Physics Division, P. O. Box 5800, Albuquerque, NM 87185, USA
Gary C. Tisone
Affiliation:
Sandia National Laboratories, Laser and Atomic Physics Division, P. O. Box 5800, Albuquerque, NM 87185, USA
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Abstract

Gallium phosphide is an important III-V semiconductor material for fabricating strained layer superlattices and high-speed and high-temperature microelectronics. Etching of this compound semiconductor with conventional techniques presents problems which may be solved by photon-induced electro-chemistry. We have shown that rapid localized etching of n-GaP in KOH can be driven with the UV lines of an argon-ion laser. The level and type of doping and the laser intensity determine the etch rates, which are nearly 60 nm/sec at 3500 Wcm−2 for n-doped material.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

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