Hostname: page-component-68945f75b7-l9cl4 Total loading time: 0 Render date: 2024-08-06T05:32:36.792Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Patterning of II-VI Epitaxial Thin Films

Published online by Cambridge University Press:  25 February 2011

S.J.C. Irvine ,
H. Hill ,
J.E. Hails ,
G.W. Blackmore  and
J.B. Mullin
S.J.C. Irvine
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
H. Hill
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
J.E. Hails
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
G.W. Blackmore
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
J.B. Mullin
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern Worcs. WR14 3PS UK
Get access

Abstract

The laser induced photo-MOVPE (photolytic-metal organic vapour phase epitaxy) technique has been used to grow epitaxial films onto CdTe or GaAs substrates (with a 257nm frequency doubled Argon ion laser). The growth temperature was chosen to be below the normal pyrolysis temperature so that decomposition of the metal-organics will only occur within the illuminated parts of the substrate. A measure of enhancement of growth rate by UV illumination is the photo-enhancement factor which has been determined for CdTe deposits onto Si(100) substrates using the precursors dimethyl cadmium (Me2Te) together with either diethyl telluride (Et2Te) or dimethyl ditelluride (Me2Te2). For patterned epitaxial layers at 300°C, Et2Te was preferable to Me2Te2 because Et2Te was more stable, yielding a higher photo-enhancement factor. A 2-D array of CdTe mesas (60 × 60μm) has been deposited onto a GaAs (100) substrate. Using imaging SIMS (secondary ion mass spectrometry) the distribution of major elements and impurities have been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 183
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Irvine, S.J.C., Mullin, J.B., Giess, J., Gough, J.S., A. Royle and G. Crimes. Crystal Growth (in press).Google Scholar
2. Kisker, D.W. and Feldman, R.D., J. Crystal Growth 72(1985) 102.Google Scholar
3. Zinck, J.J., Brewer, P.D., Jensen, J.E., Olson, G.L. and Tutt, L.W., Appl. Phys. Lett. 52 (1988) 1434.Google Scholar
4. Irvine, S.J.C., Hill, H., Dosser, O.D., Hails, J.E., Mullin, J.B., Shenai-Khatkhate, D.V. and Cole-Hamilton, D., Materials Lett. 8 (1988) 25.Google Scholar
5. Irvine, S.J.C., Giess, J., Mullin, J.B., Blackmore, G.W. and Dosser, O.D., J. Vac. Sci. Technol. B3 (1985) 1450.Google Scholar
6. Buhaenko, D.S., Francis, S.M., Goulding, P.A. and Pemble, M.E., J. Vac. Sci. Technol. B (in press).Google Scholar
7. Larciprete, R. and Stuke, M., J. Crystal Growth, 77 (1986) 235.Google Scholar
8. Haq, S., Dobson, P.S. and Irvine, S.J.C., Les Editions de Physique, Vol 15, Photon Beam and Plasma Enhanced Processing (1987) 199.Google Scholar
9. Irvine, S.J.C., Hill, H., Brown, G.T., J.E. Hails and Mullin, J.B., (to be published).Google Scholar