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Laser Mixing of Titanium on Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

T. R. Jervis ,
J-P. Hirvonen ,
M. Nastasi  and
M. R. Cohen
T. R. Jervis
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
J-P. Hirvonen
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
M. Nastasi
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
M. R. Cohen
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
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Abstract

We have used excimer laser surface processing to melt and mix single Ti layers into the surface of polycrystalline SiC substrates. The mixing of Ti into the surface is very rapid and efficient. Examination of Rutherford backscattering (RBS) data for different mixing conditions shows the formation of a preferred composition at the Ti-substrate interface which propagates from the interface with further mixing. Reconstruction of the RBS spectrum indicates that the composition of the layer is Ti45C37Si18. X-ray diffraction demonstrates the formation of Ti suicides and carbides in the surface region. Profiling of C in both mixed and uncoated samples by 6 MeV He+ scattering demonstrates that laser processing of the SiC does not cause major changes in the stoichiometry of the substrate material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 395
Copyright
Copyright © Materials Research Society 1990

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References

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