Hostname: page-component-84b7d79bbc-dwq4g Total loading time: 0 Render date: 2024-07-25T19:46:10.941Z Has data issue: false hasContentIssue false
  • English
  • Français

A Large Area Rapid Thermal Processor for Flat Panel Displays

Published online by Cambridge University Press:  21 February 2011

Chunghsin Lee  and
Robert B. Bramhall
Chunghsin Lee
Affiliation:
HIGH TEMPERATURE ENGINEERING CORP. PEABODY, MA 01960
Robert B. Bramhall
Affiliation:
HIGH TEMPERATURE ENGINEERING CORP. PEABODY, MA 01960
Get access

Abstract

The advantages of rapid thermal processing over slow, batch type processing have been demonstrated clearly in flat panel display manufacturing for a number of years. In the case of electroluminescence FPD, the brightness of the blue phosphor is increased by as much as 100%.

However, rapid thermal processors that use a lamp-based heat source - either a tungsten lamp array or a single arc lamp - have great difficulty in achieving heating uniformity over large areas.

By using a resistance-heated continuous heat source developed initially for RTP processing of large silicon wafers, temperature uniformity of less than +/− 2.5°C has been achieved over a panel with diagonal of 530mm.

A description of the system and its characteristics are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 395
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wu, I.W., Lewis, A.G., Huang, T.Y., Chiang, A., Digest of Technical Papers, Vol XXI, SID International Symposium, Las Vegas, NV 1990. pp307 Google Scholar
2. Dumbaugh, W.H., Bocko, P.L., Digest of Technical Papers, Vol XXI, SID International Symposium, Las Vegas, NV 1990. pp70 Google Scholar
3. Lee, C., U.S.Patent No4,857,689 (August 15, 1989)Google Scholar
4. Lee, C., Chizinsky, G., Solid State Technology, January, 1989.Google Scholar