Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-23T21:18:20.106Z Has data issue: false hasContentIssue false

Kinetics and Mechanism of Formation of GaN from β-Ga2O3 by NH3

Published online by Cambridge University Press:  31 January 2011

Toshiki Sakai
Affiliation:
t.sakai@eng.hokudai.ac.jp, Hokkaido University, Sapporo, Japan
Hajime Kiyono
Affiliation:
kiyono@eng.hokudai.ac.jp, Hokkaido University, Sapporo, Japan
Shiro Shimada
Affiliation:
shimashi@eng.hokudai.ac.jp, Hokkaido University, Sapporo, Japan
Get access

Abstract

Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 – 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (∼50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Vaudo, R. P., Goepfert, D., Moustakas, T.D., Beyea, D. M., Frey, T. J. and Meehan, K., J.Appl. Phys., 79, 27792783 (1996).Google Scholar
2 Jacob, G. and Bios, D., Appl. Phys. Lett., 30, 412414 (1977).Google Scholar
3 Pearton, S. J. and Ren, F., Advanced Materials, 12, 1571 (2000).Google Scholar
4 Xiao, H.D., Ma, H.L., Xue, C.S., Ma, J., Zong, F.J., Zhang, X.J., Ji, F., and Hu, W.R., Mater. Chem. Phys., 88, 180184 (2004)Google Scholar
5 Lee, H.J., Shin, T.I., and Yoon, D.H., Surf. Coat. Tech., 202, 54975500 (2008)Google Scholar
6 Dinesh, J., Eswaramoorthy, M., and Rao, C. N. R., Physical Chemistry C., 111, 510513 (2007)Google Scholar
7 Balkaş, C.M. and Davis, R.F., J. Am. Ceram. Soc., 79[9] 2309–12 (1996)Google Scholar
8 Jung, W. S., Mater Lett., 60, 29542957 (2006).Google Scholar
9 Jung, W. S., Han, O. H. and Chae, S. A., Mater. Chem Phys., 100, 199202 (2006).Google Scholar
10 Butt, Darryl P., Park, Youngsoo and Taylor, Thomas N., J. Nucl. Mater., 264, 7177 (1999)Google Scholar