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A Kinetic Model for the Strain Relaxation in Heteroepitaxial Thin Film Systems

Published online by Cambridge University Press:  18 March 2011

Y.W. Zhang ,
T.C. Wang  and
S.J. Chua
Y.W. Zhang
Affiliation:
Institute of Materials Research and EngineeringNational University of Singapore, Singapore, 117602.
T.C. Wang
Affiliation:
LNM, Institute of Mechanics, CAS, P.R. China, 10080.
S.J. Chua
Affiliation:
Institute of Materials Research and EngineeringNational University of Singapore, Singapore, 117602.
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Abstract

A kinetic model is presented to simulate the strain relaxation in the GexSi1−x/Si(100) systems. In the model, the nucleation, propagation and annihilation of threading dislocations, the interaction between threading dislocations and misfit dislocations, and surface roughness are taken into account. The model reproduces a wide range of experimental results. The implications of its predictions on the threading dislocation reduction during the growth processes of the heteoepitaxial thin film systems are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 673: Symposium P – Dislocations and Deformation Mechanisms in Thin Films and Small Structures , 2001 , P51.1
Copyright
Copyright © Materials Research Society 2001

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References

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