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Is Thermalization Due to Electronic Self-Trapplng?

Published online by Cambridge University Press:  15 February 2011

Mathieu Kemp
Mathieu Kemp*
Affiliation:
Department of Engineering Physics, Ecole Polytechnique de Montreal, Montreal, Canada H3C- 3A7
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Abstract

The interpretation that the red shift of the a-Si:H photoluminescence spectrum is due to carrier hopping is incompatible with Monte-Carlo simulations. We suggest that thermalization is instead the result of slow, gradual, electronic self-trapping. We show how this model reconciles the narrowness of the photoluminescence lifetime distribution with the observed red-shift of the energy spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 157
Copyright
Copyright © Materials Research Society 1995

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References

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