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IR-Spectroscopy and Electronic Properties of RF Magnetron Sputtered a-SiA:H (A=C,Ge) Films

Published online by Cambridge University Press:  26 February 2011

H. Rubel
Affiliation:
Fachbereich Physik, Universitat Kaiserslautern, D-6750 Kaiserslautern, FRG
B. Schröder
Affiliation:
Fachbereich Physik, Universitat Kaiserslautern, D-6750 Kaiserslautern, FRG
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Abstract

a-S1−xCx:H and a-Si1− Ge :H films are prepared by magnetron sputtering in an argon-hydrogen-methane/germane atmosphere. The hydrogen content of the carbon alloy increases with x, saturating near 40 at% for the maximum C-content (x = 0.88). From a detailed analysis of the infrared absorption modes we conclude that the formation of (CHm)n C/Si-groups (n = 1,2,3, m = 2,3) is responsible for the growth of hy r gen rich and inhomogeneous films. Structural, electrical and optical properties of the films show characteristic changes near an alloy composition of x = 0.5 which indicate the transition to a structure with threefold coordinated carbon. For the germanium alloy system lower DOS and improved photoelectrical properties have been measured for y ≤ 0.01. Decreasing H-content and SiH2 /GeH2 bonding configurations impair the alloy properties for higher y.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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IR-Spectroscopy and Electronic Properties of RF Magnetron Sputtered a-SiA:H (A=C,Ge) Films
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IR-Spectroscopy and Electronic Properties of RF Magnetron Sputtered a-SiA:H (A=C,Ge) Films
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